PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA

VF

1

1.3

V

Breakdown voltage

IR = 100 μA, E = 0

V(BR)

60

V

Reverse dark current

VR = 10 V, E = 0

Iro

2.5

35

nA

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

CD

70

pF

VR = 3 V, f = 1 MHz, E = 0

CD

25

42

pF

Open circuit voltage

Ee = 1 mW/cm2,l = 950 nm

Vo

350

mV

Temperature coefficient of Vo

Ee = 1 mW/cm2,l = 950 nm

TKVo

- 2.6

mV/K

Short circuit current

Ee = 1 mW/cm2,l = 950 nm

Ik

51

μA

Temperature coefficient of Ik

Ee = 1 mW/cm2,l = 950 nm

TKIk

0.1

%/K

Reverse light current

Ee = 1 mW/cm2,l = 950 nm, VR = 5 V

Ira

45

55

μA

Angle of half sensitivity

j

± 65

deg

Wavelength of peak sensitivity

lp

940

nm

Range of spectral bandwidth

l0.1

430 to 1100

nm

Noise equivalent power

VR = 10 V,l = 950 nm

NEP

4 x 10-14

W/ÖHz

Rise time

VR = 10 V, RL = 1 kΩ,

l = 820 nm

tr

100

ns

Fall time

VR = 10 V, RL = 1 kΩ,

l = 820 nm

tf

100

ns